The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2025
Filed:
Jul. 24, 2020
Applicant:
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Inventors:
Jordi Veirman, Grenoble, FR;
Julie Stendera, Grenoble, FR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0376 (2006.01); H01L 31/0747 (2012.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03767 (2013.01); H01L 31/0747 (2013.01); H01L 31/208 (2013.01);
Abstract
A method for treating a stack includes a substrate of n-doped crystalline silicon and a passivation layer of hydrogenated amorphous silicon disposed on a face of the substrate, the method including exposing the stack to electromagnetic radiation during a treatment period (t) less than or equal to 12 s, the electromagnetic radiation having an irradiance (E) greater than or equal to 200 kW/m.