The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2025

Filed:

Aug. 24, 2020
Applicant:

Robert Bosch Gmbh, Stuttgart, DE;

Inventors:

Christian Tobias Banzhaf, Laichingen, DE;

Jan-Hendrik Alsmeier, Pfullingen, DE;

Stephan Schwaiger, Bodelshausen, DE;

Wolfgang Feiler, Reutlingen, DE;

Dick Scholten, Stuttgart, DE;

Klaus Heyers, Reutlingen, DE;

Assignee:

ROBERT BOSCH GMBH, Stuttgart, DE;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42368 (2013.01); H01L 29/4236 (2013.01); H01L 29/4238 (2013.01); H01L 29/1608 (2013.01); H01L 29/7827 (2013.01);
Abstract

A trench transistor. The transistor including: a semiconductor region, a trench structure formed in the semiconductor region; a gate insulation layer and an electrically conductive gate layer formed on the gate insulation layer in the trench structure, and a gate contact, which is electrically conductively connected to the gate layer in an edge area of the trench transistor. A thickness of the gate insulation layer in the edge area of the trench transistor is greater than in an active area of the trench transistor.


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