The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2025

Filed:

Jun. 26, 2020
Applicant:

Aledia, Échirolles, FR;

Inventors:

Walf Chikhaoui, Voiron, FR;

Vishnuvarthan Kumaresan, Voiron, FR;

Philippe Gilet, Teche, FR;

Assignee:

ALEDIA, Echirolles, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/075 (2006.01); H01L 33/18 (2010.01);
U.S. Cl.
CPC ...
H01L 25/0753 (2013.01); H01L 33/18 (2013.01);
Abstract

An optoelectronic device includes pixels that each have at least one primary sub-pixel having a primary light-emitting diode formed on a support face a substrate provided with a first primary semiconductive portion that has an overall elongated wire-like shape having a top end, a primary lattice parameter accommodation layer arranged on the top end of the first primary semiconductive portion, a second primary active semiconductive portion arranged at least on the primary lattice parameter accommodation layer, and a third primary semiconductive portion arranged on the second primary active semiconductive portion. The primary lattice parameter accommodation layer has, with the second primary active semiconductive portion, a first difference in primary lattice parameters between 2.12% and 0.93% relative to the second primary active semiconductive portion.


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