The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2025

Filed:

Feb. 06, 2020
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Ken Sakamoto, Tokyo, JP;

Haruko Hitomi, Tokyo, JP;

Kozo Harada, Tokyo, JP;

Seiki Hiramatsu, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01); H01L 25/07 (2006.01); H01L 25/18 (2023.01); H02M 7/5387 (2007.01); H01L 23/29 (2006.01); H02M 1/08 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3135 (2013.01); H01L 23/3142 (2013.01); H01L 24/05 (2013.01); H01L 24/42 (2013.01); H01L 24/44 (2013.01); H01L 24/45 (2013.01); H01L 24/47 (2013.01); H01L 24/48 (2013.01); H01L 25/0655 (2013.01); H01L 25/072 (2013.01); H01L 25/18 (2013.01); H02M 7/5387 (2013.01); H01L 23/293 (2013.01); H01L 23/296 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/4501 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/45155 (2013.01); H01L 2224/45157 (2013.01); H01L 2224/4516 (2013.01); H01L 2224/45599 (2013.01); H01L 2224/4569 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48175 (2013.01); H01L 2924/1811 (2013.01); H01L 2924/1815 (2013.01); H01L 2924/182 (2013.01); H01L 2924/186 (2013.01); H01L 2924/35121 (2013.01); H02M 1/08 (2013.01);
Abstract

A semiconductor module includes a first power semiconductor device, a conductive wire, and a resin film. The conductive wire is joined to a surface of a first front electrode of the first power semiconductor device. The resin film is formed to be continuous on at least one of an end portion or an end portion of a first joint between the first front electrode and the conductive wire in a longitudinal direction of the conductive wire, a surface of the first front electrode, and a surface of the conductive wire. The resin film has an elastic elongation rate of 4.5% to 10.0%.


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