The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2025

Filed:

Oct. 29, 2021
Applicants:

Mianyang Boe Optoelectronics Technology Co., Ltd., Sichuan, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Yawei Zhu, Beijing, CN;

Xin Cao, Beijing, CN;

Zifeng Wang, Beijing, CN;

Danfeng Wang, Beijing, CN;

Haoyuan Fan, Beijing, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/3233 (2016.01);
U.S. Cl.
CPC ...
G09G 3/3233 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0465 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0842 (2013.01); G09G 2300/0861 (2013.01); G09G 2310/08 (2013.01); G09G 2320/0233 (2013.01);
Abstract

A pixel driving circuit, a driving method thereof and a display panel are provided. The pixel driving circuit includes a driving transistor, a capacitor having two terminals connected to a first power terminal and a gate electrode of the driving transistor, and a light emitting device. The pixel driving circuit includes: a reset module; a data writing module; a threshold compensation module including a compensation transistor configured to electrically connect second and gate electrodes of the driving transistor together in the data writing phase; a light emitting control module including a first gating transistor configured to electrically connect the second electrode of the driving transistor and the light emitting device in the reset phase and disconnect the second electrode from the light emitting device in the data writing phase. The compensation transistor and the first gating transistor are oxide transistors, and the driving transistor is a low-temperature polysilicon transistor.


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