The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2025

Filed:

Nov. 09, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kang-Min Jung, Seoul, KR;

Kyo Il Koo, Hwaseong-si, KR;

Sang-Wook Park, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 30/392 (2020.01); G06F 30/398 (2020.01); G06F 119/18 (2020.01);
U.S. Cl.
CPC ...
G06F 30/392 (2020.01); G06F 30/398 (2020.01); G06F 2119/18 (2020.01);
Abstract

Provided is a method of manufacturing a semiconductor device. the method comprises receiving layout data including a plurality of pieces of pattern data, the plurality of pieces of pattern data having through first to Nunique patterns (N is a natural number greater than or equal to two), calculating first to Ndensity values of the first to Nunique patterns from the layout data and calculating first to Npopulations of the first to Nunique patterns from the layout data, performing sampling by selecting some unique patterns among the first to Nunique patterns, the selecting based on the first to Ndensity values and the first to Npopulations, and performing etch modeling on sampled patterns of the plurality of pieces of pattern data, the sampled patterns corresponding to the selected unique patterns.


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