The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2025

Filed:

Feb. 24, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Masahiro Takahashi, Yokohama Kanagawa, JP;

Yoshiaki Asao, Kawasaki Kanagawa, JP;

Yukihiro Nomura, Taito Tokyo, JP;

Daisaburo Takashima, Yokohama Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); G11C 13/00 (2006.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/8828 (2023.02); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); H10B 63/30 (2023.02); H10B 63/84 (2023.02); H10N 70/231 (2023.02);
Abstract

A semiconductor storage device includes a memory cell including a core portion that extends in a first direction above a semiconductor substrate; a variable resistance layer that extends in the first direction and is in contact with the core portion; a semiconductor layer that extends in the first direction and is in contact with the variable resistance layer; a first insulator layer that extends in the first direction and is in contact with the semiconductor layer; and a first voltage applying electrode that extends in a second direction orthogonal to the first direction and is in contact with the first insulator layer. The core portion is a vacuum region, or a region containing inert gas.


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