The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Jun. 23, 2020
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Kazunori Watanabe, Tokyo, JP;
Koji Kusunoki, Kanagawa, JP;
Susumu Kawashima, Kanagawa, JP;
Taisuke Kamada, Saitama, JP;
Ryo Hatsumi, Kanagawa, JP;
Daisuke Kubota, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A display apparatus having a photosensing function is provided. The display apparatus includes a first pixel circuit and a second pixel circuit. The first pixel circuit includes a light-receiving device, a first transistor, and a second transistor. The second pixel circuit includes a light-emitting device. The light-receiving device includes a first pixel electrode, an active layer, and a common electrode. The light-emitting device includes a second pixel electrode, a light-emitting layer, and the common electrode. The active layer is positioned over the first pixel electrode and includes a first organic compound. The light-emitting layer is positioned over the second pixel electrode and includes a second organic compound different from the first organic compound. The common electrode includes a portion overlapping with the first pixel electrode with the active layer therebetween and a portion overlapping with the second pixel electrode with the light-emitting layer therebetween. The first transistor includes low-temperature polysilicon as a semiconductor layer and the second transistor includes a metal oxide as a semiconductor layer.