The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Jul. 05, 2022
Applicant:
Japan Display Inc., Tokyo, JP;
Inventor:
Toshihiro Sato, Tokyo, JP;
Assignee:
Japan Display Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H10K 59/121 (2023.01); H10K 59/126 (2023.01); H10K 59/131 (2023.01);
U.S. Cl.
CPC ...
H10K 59/1213 (2023.02); H01L 27/1222 (2013.01); H01L 27/1225 (2013.01); H01L 27/1251 (2013.01); H01L 27/1255 (2013.01); H01L 29/04 (2013.01); H01L 29/16 (2013.01); H01L 29/24 (2013.01); H01L 29/66757 (2013.01); H01L 29/66969 (2013.01); H01L 29/78675 (2013.01); H01L 29/7869 (2013.01); H10K 59/1216 (2023.02); H10K 59/126 (2023.02); H10K 59/131 (2023.02);
Abstract
A display device includes two or more transistors in one pixel, and the two or more transistors include a first transistor of which a channel semiconductor layer is polycrystalline silicon, and a second transistor of which a channel semiconductor layer is an oxide semiconductor.