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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12219797 B1

PDFFull Text
Date of Patent:
Feb. 04, 2025

Filed:

Mar. 26, 2019

Display device including a frame-like shape oxide semiconductor layer

Applicant:

Sharp Kabushiki Kaisha, Sakai, JP;

Inventors:

Tohru Sonoda, Sakai, JP;

Takashi Ochi, Sakai, JP;

Jumpei Takahashi, Sakai, JP;

Assignee:

SHARP KABUSHIKI KAISHA, Sakai, JP;

Attorney:

ScienBiziP, P.C.

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
H10K 50/84 (2023.01); H10K 50/844 (2023.01); H10K 59/12 (2023.01); H10K 59/121 (2023.01); H10K 59/65 (2023.01); H10K 71/00 (2023.01); H10K 77/10 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 50/17 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10K 50/844 (2023.02); H10K 59/121 (2023.02); H10K 59/65 (2023.02); H10K 71/00 (2023.02); H10K 77/111 (2023.02); H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 50/17 (2023.02); H10K 50/171 (2023.02); H10K 59/12 (2023.02); H10K 59/1201 (2023.02); H10K 59/1216 (2023.02); H10K 2102/311 (2023.02);
Abstract

An aspect of the disclosure, in a non-display region, an oxide semiconductor layer is provided in a frame-like shape along a peripheral edge of a through hole, a first opening is provided in a first inorganic insulating film so as to surround the through hole in a plan view and expose the oxide semiconductor layer in the non-display region, a common functional layer is provided so as to extend from a display region to the non-display region, a second opening is provided in a frame-like shape so as to surround the through hole in a plan view and expose the oxide semiconductor layer in the common functional layer, and a second inorganic insulating film is in contact with the oxide semiconductor layer via the second opening.

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