The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Jul. 08, 2022
SK Hynix Inc., Icheon-si, KR;
In Su Park, Icheon-si, KR;
SK hynix Inc., Icheon-si, KR;
Abstract
A non-volatile memory device may include a semiconductor substrate, a stack structure and a source structure. The stack structure may be formed on the semiconductor substrate. The source structure may be formed in a slit configured to divide the stack structure. The source structure may include a sealing layer, a source liner, a gap-filling layer and a source contact pattern. The sealing layer may be formed on an inner wall of the slit. The source liner may be formed on a surface of the sealing layer and a bottom surface of the slit. The gap-filling layer may be formed in the slit. The source contact pattern may be formed on the gap-filling layer in the slit. The source contact pattern may be electrically connected with the source liner.