The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2025

Filed:

Mar. 15, 2022
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Eric Bohannon, Henrietta, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 25/57 (2023.01); H04N 25/76 (2023.01);
U.S. Cl.
CPC ...
H04N 25/57 (2023.01); H04N 25/76 (2023.01);
Abstract

A single exposure high dynamic range (HDR) analog front-end (AFE) for complementary metal-oxide-semiconductor (CMOS) image sensors. In one embodiment, a single exposure HDR AFE includes input signal circuitry, gain stage circuitry, a continuous-time filter, comparator circuitry, and counter circuitry. The input signal circuitry is configured to generate an input signal. The gain stage circuitry including two gain stages and one gain stage is configured to generate a high gain output signal based on the input signal. The continuous-time filter is configured to generate a filtered high gain output signal by filtering the high gain output signal. The comparator circuitry is configured to generate a high gain comparison signal by comparing the filtered high gain output signal to the ramp voltage. The counter circuitry is configured to generate a high gain digital output signal based on the high gain comparison signal and using the clock signal.


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