The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2025

Filed:

Mar. 24, 2023
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Ahmed Essam Hashim, Gilbert, AZ (US);

Karthikeyan Kandaswamy, Chandler, AZ (US);

Abhishek Badarinath, Tempe, AZ (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01); H03K 5/08 (2006.01); H03K 17/10 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H03K 17/102 (2013.01);
Abstract

A gate driver circuit includes first through third transistors, a first voltage clamp, and control logic. The first transistor has a first control input and first and second current terminals. The first current terminal couples to a first voltage terminal. The first voltage clamp couples between the first voltage terminal and the first control input. The second transistor couples between the first control input and the second voltage terminal. The third transistor couples between the first control input and the second voltage terminal. The third transistor is smaller than the second transistor. The control logic is configured to turn on both the second and third transistors to thereby turn on the first transistor, and the first control logic configured to turn off the second transistor after the first transistor turns on while maintaining in an on-state the third transistor to maintain the first transistor in the on-state.


Find Patent Forward Citations

Hashim, Ahmed. (2025). Wide voltage gate driver using low gate oxide transistors (U.S. Patent No. 12218655). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12218655

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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