The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Nov. 18, 2021
Seiko Epson Corporation, Tokyo, JP;
Sophia School Corporation, Tokyo, JP;
Yasuto Akatsuka, Chino, JP;
Katsumi Kishino, Akiruno, JP;
SEIKO EPSON CORPORATION, Tokyo, JP;
SOPHIA SCHOOL CORPORATION, Tokyo, JP;
Abstract
A light emitting apparatus includes a laminate including a columnar section. The columnar section includes an n-type semiconductor layer, a first p-type semiconductor layer, a light emitting layer provided between the n-type semiconductor layer and the first p-type semiconductor layer, and a second p-type semiconductor layer in contact with the first p-type semiconductor layer. The first p-type semiconductor layer is provided between the light emitting layer and the second p-type semiconductor layer. The first p-type semiconductor layer has a c-plane and a facet surface. The second p-type semiconductor layer has a c-plane region provided at the c-plane and a facet-surface region provided at the facet surface. The c-plane region has negatively polarized charges at an interface with the first p-type semiconductor layer. The facet-surface region has positively polarized charges at the interface.