The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2025

Filed:

Jan. 09, 2020
Applicant:

Ferdinand-braun-institut Ggmbh, Leibniz-institut Für Höchstfrequenztechnik, Berlin, DE;

Inventors:

Goetz Erbert, Lobau, DE;

Hans Wenzel, Berlin, DE;

Steffen Knigge, Konigs Wusterhausen, DE;

Christian Dominik Martin, Berlin, DE;

Andre Maassdorf, Berlin, DE;

Pietro Della Casa, Berlin, DE;

Andrea Knigge, Konigs Wusterhausen, DE;

Paul Crump, Berlin, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/22 (2006.01); H01S 5/10 (2021.01); H01S 5/40 (2006.01);
U.S. Cl.
CPC ...
H01S 5/2205 (2013.01); H01S 5/1064 (2013.01); H01S 5/2206 (2013.01); H01S 5/4043 (2013.01);
Abstract

The present invention relates to a device for generating laser radiation. An object of the present invention is to indicate a laser diode which simultaneously has a high degree of efficiency and a low degree of far field divergence. The diode laser according to the invention comprises a current barrier (), characterized in that the current barrier () extends along a third axis (X), wherein the current barrier () has at least one opening, and a first width (W) of the opening of the current barrier () along the third axis (X) is smaller than a second width (W) of the metal p-contact () along the third axis (X).


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