The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2025

Filed:

Sep. 25, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Donggun Lee, Hwaseong-si, KR;

Gibum Kim, Yongin-si, KR;

Joosung Kim, Seongnam-si, KR;

Jonguk Seo, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/24 (2010.01); H01L 25/16 (2023.01); H01L 33/00 (2010.01); H01L 33/16 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); H01L 25/167 (2013.01); H01L 33/0095 (2013.01); H01L 33/16 (2013.01); H01L 33/007 (2013.01); H01L 33/0075 (2013.01); H01L 33/0093 (2020.05); H01L 33/32 (2013.01); H01L 33/385 (2013.01);
Abstract

A semiconductor light emitting device includes a light emitting structure in the form of a rod, including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, and having a first surface, a second surface opposing the first surface, and a side surface connecting the first and second surfaces; a regrowth semiconductor layer surrounding an entire side surface of the light emitting structure and having a first thickness in a first position along a perimeter of the side surface and a second thickness, different from the first thickness, in a second position along a perimeter of the side surface; a first electrode on the first surface of the light emitting structure and connected to the first conductivity-type semiconductor layer; and a second electrode on the second surface of the light emitting structure and connected to the second conductivity-type semiconductor layer.


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