The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Oct. 28, 2020
Csem Centre Suisse D'electronique ET DE Microtechnique Sa—recherche ET Developpement, Neuchâtel, CH;
Antonin Faes, Yvonand, CH;
Bertrand Paviet-Salomon, Saint-Blaise, CH;
Nicolas Badel, La Praz, CH;
Jonathan Champliaud, Savagnier, CH;
Matthieu Despeisse, Neuchâtel, CH;
Christophe Ballif, Neuchâtel, CH;
Gaëlle Andreatta, Neuchâtel, CH;
Abstract
Method of manufacturing a single-side-contacted photovoltaic device (), comprising the steps of: a) providing a photovoltaically-active substrate () defining a plurality of alternating hole collecting zones () and electron collecting zones () arranged in parallel strips; b) depositing a conductive layer () across said zones; c) depositing at least one conductive track () extending along at least part of each of said zones (); d) selectively forming a dielectric layer () on each of said zones (), so as to leave an exposed area free of dielectric at an interface between adjacent zones (); e) etching said conductive layer () in said exposed areas; f) applying a plurality of interconnecting conductors () so as to electrically interconnect at least a portion of said hole collecting zones () with each other, and to electrically interconnect at least a portion of said electron collecting zones () with each other.