The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Apr. 29, 2022
South China University of Technology, Guangzhou, CN;
Wenliang Wang, Guangzhou, CN;
Guoqiang Li, Guangzhou, CN;
Baiyu Su, Guangzhou, CN;
Zhengliang Lin, Guangzhou, CN;
Deqi Kong, Guangzhou, CN;
Wenjin Mai, Guangzhou, CN;
SOUTH CHINA UNIVERSITY OF TECHNOLOGY, Guangzhou, CN;
Abstract
An InGaN/GaN multiple quantum well blue light detector- includes: a Si substrate, an AlN/AlGaN/GaN buffer layer, a u-GaN/AlN/u-GaN/SiN/u-GaN buffer layer, an n-GaN buffer layer, an InGaN/GaN superlattice layer and an InGaN/GaN multiple quantum well layer in sequence from bottom to top. The multiple quantum well layer has a groove and a mesa, the mesa and the groove of the multiple quantum well layer are provided with a SiNpassivation layer. The passivation layer in the groove is provided with a first metal layer electrode with a semicircular cross section, and the passivation layer on the mesa is provided with second metal layer electrode.