The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2025

Filed:

May. 31, 2021
Applicant:

Tcl China Star Optoelectronics Technology Co., Ltd., Guangdong, CN;

Inventor:

Xi Cheng, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 25/075 (2006.01); H01L 25/16 (2023.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78645 (2013.01); H01L 25/0753 (2013.01); H01L 25/167 (2013.01); H01L 27/1255 (2013.01); H01L 29/78696 (2013.01);
Abstract

The application discloses a thin film transistor and a light-emitting diode (LED) backplane. The thin film transistor includes: a first gate, a first insulating layer, a first source, a semiconductor layer, a first drain, a second insulating layer, and a second gate; the first insulating layer covers the first gate; the first source, the semiconductor layer, and the first drain are all disposed at a side of the first insulating layer away from the first gate; the second insulating layer covers the first drain, the semiconductor layer, and the first source; and the second gate is disposed on a surface of a side of the second insulating layer away from the first gate, wherein the first source, the semiconductor layer, and the first drain jointly constitute a vertical channel structure.


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