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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12218237 B1

PDFFull Text
Date of Patent:
Feb. 04, 2025

Filed:

Sep. 11, 2019

Semiconductor device, and method for manufacturing semiconductor device

Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Yuki Yanagisawa, Kanagawa, JP;

Takashi Futatsuki, Kagoshima, JP;

Assignee:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Attorney:

Sheridan Ross PC

Primary Examiner:

Maliheh Malek

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/12 (2006.01); H01L 29/08 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7845 (2013.01); H01L 27/1203 (2013.01); H01L 29/0847 (2013.01); H01L 29/401 (2013.01); H01L 29/41725 (2013.01); H01L 29/4916 (2013.01); H01L 29/66477 (2013.01);
Abstract

There is provided a semiconductor device including: a semiconductor substrate; a gate insulating film provided on the semiconductor substrate; a gate electrode layer that is provided on the gate insulating film and contains impurity ions; and source or drain regions that are provided on the semiconductor substrate on both sides of the gate electrode layer and contain conductive impurities, in which a concentration of the impurity ions in the gate electrode layer is higher than concentrations of the conductive impurities in the source or drain regions.

Find Patent Forward Citations

Yanagisawa, Yuki. (2025). Semiconductor device, and method for manufacturing semiconductor device (U.S. Patent No. 12218237). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12218237

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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