The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Dec. 04, 2020
Electrophotonic-ic Inc., Kanata, CA;
Lawrence E. Tarof, Kanata, CA;
William A. Hagley, Ottawa, CA;
Gudmundur A. Hjartarson, Ottawa, CA;
John William Mitchell Rogers, Nepean, CA;
ElectroPhotonic-IC Inc., Kanata, CA;
Abstract
An optical receiver comprises a monolithically integrated pin photodiode (PIN) and transimpedance amplifier (TIA). The TIA comprises InP heterojunction bipolar transistors (HBT) fabricated from a first plurality of layers of an epitaxial layer stack grown on a SI:InP substrate; the PIN is fabricated from a second plurality of layers of the epitaxial layer stack. The p-contact of the PIN is directly connected to the input of the TIA to reduce PIN capacitance C. The TIA capacitance Cmay be matched to C. Device parameters comprising: a thickness of the absorption layer, window area, and an optional mirror thickness of the PIN; device capacitance C+C; and feedback resistance Rof the TIA; are optimized to performance specifications comprising a specified sensitivity and responsivity at an operational wavelength. This design approach enables cost-effective fabrication an integrated PIN-TIA, for applications such as a 1577 nm receiver for an ONU for 10G-PON.