The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Jan. 14, 2022
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Jin Hong Park, Hwaseong-si, KR;
Jae Woong Choi, Suwon-si, KR;
Je Jun Lee, Suwon-si, KR;
Ju Hee Lee, Ansan-si, KR;
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Abstract
A semiconductor device with multiple zero differential transconductance includes: a conductive substrate; a first insulating layer and a second insulating layer disposed on the conductive substrate; a first semiconductor and a second semiconductor disposed on first portions of the first insulating layer and the second insulating layer, respectively; a first buffer layer and a second buffer layer disposed on electrode contact areas of the first semiconductor and the second semiconductor, respectively; and an anode electrode and a cathode electrode disposed on second portions, which are different from the first portions, of the first insulating layer and the second insulating layer and on the first buffer layer and the second buffer layer, respectively, wherein the first semiconductor and the second semiconductor are disposed in parallel with each other and connected by the anode electrode and the cathode electrode.