The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Jul. 12, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jung Ho Do, Hwaseong-si, KR;
Sanghoon Baek, Hwaseong-si, KR;
Abstract
A semiconductor device includes a first logic gate defined within a first unit cell footprint on a semiconductor substrate. The first logic gate includes a first field effect transistor including a first gate electrode and a first source/drain region, and a second field effect transistor including a second gate electrode and a second source/drain region. A first wiring pattern is provided, which extends in a first direction across a portion of the first unit cell footprint. The first wiring pattern is electrically connected to at least one of the first gate electrode and the second source/drain region, and has: (i) a first terminal end within a perimeter of the first unit cell footprint, and (ii) a second terminal end, which extends outside the perimeter of the first unit cell footprint but is not electrically connected to any current carrying region of any semiconductor device that is located outside the perimeter of the first unit cell footprint.