The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2025

Filed:

Mar. 23, 2022
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Andre Schmenn, Sachsenkam, DE;

Isabella Goetz, Bodenwoehr, DE;

Egle Tylaite, Munich, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/62 (2013.01); H01L 27/0248 (2013.01);
Abstract

An overvoltage protection device includes a semiconductor body including a substrate region disposed beneath an upper surface of the semiconductor body, first and second contact pads disposed over the upper surface of the semiconductor body, a trenched connector formed in the semiconductor body, a vertical voltage blocking device formed in the semiconductor body, wherein the trenched connector includes a trench that is formed in the upper surface of the semiconductor body and extends to the substrate region, and a metal electrode disposed within the trench, wherein the metal electrode forms an electrically conductive connection between the first contact pad and the substrate region, and wherein the voltage blocking device is connected between the second contact pad and the substrate region.


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