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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12218081 B1

PDFFull Text
Date of Patent:
Feb. 04, 2025

Filed:

Jul. 21, 2023

Microelectronic devices with a polysilicon structure above a staircase structure, and related methods

Applicant:

Lodestar Licensing Group, Llc, Evanston, IL (US);

Inventors:

Jivaan Kishore Jhothiraman, Meridian, ID (US);

John M. Meldrim, Boise, ID (US);

Lifang Xu, Boise, ID (US);

Assignee:

Lodestar Licensing Group LLC, Evanston, IL (US);

Attorney:

TraskBritt

Primary Examiner:

Changhyun Yi

Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/535 (2006.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/41 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/76816 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 21/76895 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/535 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/41 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02); H01L 2221/1063 (2013.01);
Abstract

Microelectronic devices include a stack structure of insulative structures vertically alternating with conductive structures and arranged in tiers forming opposing staircase structures. A polysilicon fill material substantially fills an opening (e.g., a high-aspect-ratio opening) between the opposing staircase structures. The polysilicon fill material may have non-compressive stress such that the stack structure may be partitioned into blocks without the blocks bending and without contacts—formed in at least one of the polysilicon fill material and the stack structure—deforming, misaligning, or forming electrical shorts with neighboring contacts.

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