The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Nov. 25, 2020
Commissariat À Lénergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Abstract
A method of obtaining a doped semiconductor layer, including the successive steps of: a) performing, in a first single-crystal layer made of a semiconductor alloy of at least a first element Aand a second element A, an ion implantation of a first element B which is a dopant for the alloy and of a second element C which is not a dopant for the alloy, to make an upper portion of the first layer amorphous and to preserve the crystal structure of a lower portion of the first layer; and b) performing a solid phase recrystallization anneal of the upper portion of the first layer, resulting in transforming the upper portion of the first layer into a doped single-crystal layer of the alloy.