The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2025

Filed:

Jan. 31, 2023
Applicant:

Qromis, Inc., Santa Clara, CA (US);

Inventors:

Vladimir Odnoblyudov, Danville, CA (US);

Cem Basceri, Los Gatos, CA (US);

Shari Farrens, Boise, ID (US);

Assignee:

Qromis, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/24 (2006.01); C23C 16/30 (2006.01); C23C 16/34 (2006.01); C30B 25/18 (2006.01); C30B 29/06 (2006.01); C30B 29/40 (2006.01); C30B 29/68 (2006.01); C30B 33/06 (2006.01); C30B 33/08 (2006.01); H01L 21/74 (2006.01); H01L 21/8252 (2006.01); H01L 23/535 (2006.01); H01L 29/20 (2006.01); H01L 21/762 (2006.01); H01L 29/778 (2006.01); H01L 29/80 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0242 (2013.01); C23C 16/24 (2013.01); C23C 16/303 (2013.01); C23C 16/345 (2013.01); C30B 25/18 (2013.01); C30B 29/06 (2013.01); C30B 29/406 (2013.01); C30B 29/68 (2013.01); C30B 33/06 (2013.01); C30B 33/08 (2013.01); H01L 21/02428 (2013.01); H01L 21/0245 (2013.01); H01L 21/02488 (2013.01); H01L 21/02491 (2013.01); H01L 21/02505 (2013.01); H01L 21/02532 (2013.01); H01L 21/0254 (2013.01); H01L 21/743 (2013.01); H01L 21/8252 (2013.01); H01L 23/535 (2013.01); H01L 29/2003 (2013.01); H01L 21/76254 (2013.01); H01L 29/7783 (2013.01); H01L 29/802 (2013.01);
Abstract

A substrate includes a support structure comprising a polycrystalline ceramic core, a first adhesion layer encapsulating the polycrystalline ceramic core, a barrier layer encapsulating the first adhesion layer, a second adhesion layer coupled to the barrier layer, and a conductive layer coupled to the second adhesion layer. The substrate also includes a bonding layer coupled to the support structure, a substantially single crystal silicon layer coupled to the bonding layer, and an epitaxial semiconductor layer coupled to the substantially single crystal silicon layer.


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