The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2025

Filed:

Oct. 05, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yonghyuk Choi, Suwon-si, KR;

Yohan Lee, Incheon, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/22 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3427 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/3459 (2013.01); G11C 11/5628 (2013.01);
Abstract

An operating method of a non-volatile memory device that includes a plurality of cell strings each including a first stack and a second stack adjacent to the first stack, the operating method include performing a first program operation during a time period in which a plurality of program loops are performed, by applying a program voltage including a first plurality of voltage levels to a select word line connected to the first stack of each of the plurality of cell strings, applying, during the time period, second voltages including a second plurality of voltage levels to a non-select word line connected to the first stack of each of the plurality of cell strings, and maintaining, during the time period, a third voltage at a first level, the third voltage applied to a non-select word line connected to the second stack of each of the plurality of cell strings.


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