The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Sep. 26, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Gyuha Park, Suwon-si, KR;
Daehan Kim, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A non-volatile memory device includes: one or more memory blocks including a plurality of memory cells connected to a plurality of word lines, and a plurality of memory cell strings; a page buffer unit; one or more pass units including a plurality of pass transistors that may supply operation voltages to the plurality of word lines; one or more monitoring units including one or more monitoring pass transistors connected to the plurality of pass transistors; a voltage generator that may supply activation voltages to a first pass transistor, in which a leakage current is to be measured, and to the one or more monitoring pass transistors; and a control logic that may control the voltage generator to generate the activation voltages by using a voltage control signal and detect the leakage current based on monitoring voltages output from the one or more monitoring pass transistors.