The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Aug. 25, 2020
Applicant:
Rockley Photonics Limited, Altrincham, GB;
Inventor:
Adam Scofield, Los Angeles, CA (US);
Assignee:
Rockley Photonics Limited, Altrincham, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); G02F 1/025 (2006.01);
U.S. Cl.
CPC ...
G02F 1/025 (2013.01); G02B 6/12 (2013.01); G02B 6/12004 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12142 (2013.01); G02B 2006/12173 (2013.01); G02B 2006/12176 (2013.01); G02B 2006/12178 (2013.01);
Abstract
A MOS capacitor-type optical modulator comprising a silicon-on-insulator (SOI) substrate, a first doped region in a silicon device layer of the SOI substrate, and a second doped region laterally separated from the first doped region by a vertically extending insulator layer to form a lateral MOS capacitor region. The first doped region, second doped region and insulator layer are formed from different materials.