The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Apr. 19, 2024
Eclypia, Grenoble, FR;
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Rolf Aidam, Wyhl, DE;
Sébastien Barnola, Villard Bonnot, FR;
Badhise Ben Bakir, Brézins, FR;
Jean-Guillaume Coutard, Saint Pancrasse, FR;
Kevin Jourde, Grenoble, FR;
ECLYPIA, Grenoble, FR;
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
Abstract
A photoacoustic detecting device comprises a housing which houses: a lighting module, a photoacoustic cell, comprising an surface contact intended to be placed in contact with the medium to analyse, a photoacoustic cavity extending from the surface contact to a top of the photoacoustic cell, at least one window closing the top of the photoacoustic cell or the contact surface of the photoacoustic cell, at least one subwavelength pattern located on a surface of said window, said subwavelength pattern being configured to focus the light beam on an surface of interest of the medium to analyse, a sensor, linked to the cavity, the sensor being configured to detect a generated signal, said generated signal being generated in the photoacoustic cavity by a photothermic effect in the medium, and wherein the photoacoustic cell, the window and the subwavelength pattern are formed on a single silicon wafer.