The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Mar. 10, 2022
Kioxia Corporation, Tokyo, JP;
Kazuya Sawada, Seoul, KR;
Toshihiko Nagase, Seoul, KR;
Kenichi Yoshino, Seongnam-si, KR;
Kazuhiro Tomioka, Seoul, KR;
Naoki Akiyama, Seoul, KR;
Takuya Shimano, Seoul, KR;
Hisanori Aikawa, Seoul, KR;
Taichi Igarashi, Seoul, KR;
Kioxia Corporation, Tokyo, JP;
Abstract
A magnetoresistance memory device includes a first conductor, a first insulator covering a side surface of the first conductor, a second conductor on the first conductor that are substantially made of a non-magnetic non-nitrogen material. The device includes a variable resistance material, a third conductor, a first ferromagnetic layer, an insulating layer, and a second ferromagnetic layer. The third conductor, a fourth conductor on the second ferromagnetic layer, and a second insulator covering side surfaces of the first and second ferromagnetic layers and insulating layer are substantially made of a non-nitrogen material. A third insulator is on the second insulator.