The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Jun. 29, 2023
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Toshihiko Hayashi, Kanagawa, JP;

Masahiro Joei, Kanagawa, JP;

Kenichi Murata, Kanagawa, JP;

Shintarou Hirata, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H10K 30/15 (2023.01); H10K 39/00 (2023.01); H10K 59/65 (2023.01);
U.S. Cl.
CPC ...
H10K 30/152 (2023.02); H01L 27/146 (2013.01); H01L 27/14609 (2013.01); H10K 39/00 (2023.02); H10K 59/65 (2023.02);
Abstract

To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.


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