The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Mar. 04, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Byungjin Lee, Suwon-si, KR;

Dong-Sik Lee, Suwon-si, KR;

Joon-Sung Lim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 43/10 (2023.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 43/10 (2023.02); H01L 21/02532 (2013.01); H01L 21/0262 (2013.01); H01L 21/02636 (2013.01); H01L 21/30604 (2013.01); H01L 21/308 (2013.01); H01L 29/40117 (2019.08); H01L 29/513 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device includes a stack structure that includes a plurality of dielectric layers spaced apart from each other on a substrate, a plurality of electrodes interposed between the plurality of dielectric layers, and a plurality of stopper layers interposed between the plurality of dielectric layers; and a vertical channel structure that penetrates the stack structure. Each of the plurality of electrodes and the plurality of stopper layers is disposed in a corresponding empty space interposed between the plurality of dielectric layers, the plurality of stopper layers includes a first stopper layer and a second stopper layer that is interposed between the first stopper layer and the substrate, and at least one of the plurality of electrodes is interposed between the first stopper layer and the second stopper layer.


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