The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Oct. 29, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seokcheon Baek, Hwaseong-si, KR;

Seungjun Lee, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 41/27 (2023.01); H01L 25/10 (2006.01); H01L 25/18 (2023.01); H10B 43/27 (2023.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); H01L 25/18 (2013.01); H10B 43/27 (2023.02); H01L 25/0657 (2013.01); H01L 25/105 (2013.01);
Abstract

A semiconductor device includes a substrate having a first region and a second region, gate electrodes stacked in a first direction on the first region and each including a pad region having an upper surface exposed upwardly in the second region, channel structures penetrating the gate electrodes and extending in the first direction, separation regions penetrating the gate electrodes and extending in the second direction, contact plugs each penetrating the pad region of each of the gate electrodes and extending in the first direction, a nitride layer disposed in an external side of a lowermost first gate electrode among the gate electrodes, spaced apart from the lowermost first gate electrode, and extending horizontally, and a dummy gate electrode disposed between the lowermost first gate electrode and the nitride layer in the second direction and having a first end spaced apart from the lowermost first gate electrode.


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