The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Feb. 19, 2024
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Yu-Ying Lin, New Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipel, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/485 (2023.02); H10B 12/033 (2023.02); H10B 12/053 (2023.02); H10B 12/315 (2023.02); H10B 12/34 (2023.02); H10B 12/482 (2023.02);
Abstract
A memory structure and a method of manufacturing the same are provided. The method includes forming a gate structure and a source/drain region in a substrate, in which the source/drain region is next to the gate structure. A dry etching process is performed to form a trench in the source/drain region. A wet etching process is performed to expand the trench to form an expanded trench, in which the expanded trench has a polygonal cross section profile. A bit line contact is formed in the expanded trench.