The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Feb. 28, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Takao Kosaka, Yokohama Kanagawa, JP;

Hideto Horii, Yokohama Kanagawa, JP;

Hiroki Tokuhira, Kawasaki Kanagawa, JP;

Kazuya Matsuzawa, Kamakura Kanagawa, JP;

Hiroki Kawai, Inazawa Aichi, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B 12/00 (2006.01); G11C 11/4091 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); G11C 11/4091 (2013.01); H01L 29/66969 (2013.01); H01L 29/78642 (2013.01); H01L 29/7869 (2013.01); H10B 12/03 (2023.02); H10B 12/05 (2023.02); H10B 12/50 (2023.02);
Abstract

A semiconductor device includes a first conductive layer extending along a first direction, a semiconductor layer extending along a second direction crossing the first direction, penetrating the first conductive layer, and including an oxide semiconductor, a first insulating layer between the first conductive layer and the semiconductor layer, a second conductive layer provided on one side of the semiconductor layer in the second direction and electrically connected thereto, a third conductive layer provided on the other side of the semiconductor layer in the second direction and electrically connected thereto, an electric conductor extending from the third conductive layer toward the second conductive layer along the semiconductor layer, and a charge storage film between the semiconductor layer and the electric conductor.


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