The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Dec. 20, 2021
Applicant:
Socionext Inc., Kanagawa, JP;
Inventor:
Masanobu Hirose, Yokohama, JP;
Assignee:
SOCIONEXT INC., Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 10/00 (2023.01); G11C 5/02 (2006.01); G11C 5/06 (2006.01); G11C 11/412 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H10B 10/125 (2023.02); G11C 5/025 (2013.01); G11C 5/063 (2013.01); G11C 11/412 (2013.01); H01L 29/0673 (2013.01); H10B 10/18 (2023.02); H01L 29/42392 (2013.01);
Abstract
Transistors (N, N) corresponding to a drive transistor (PD), transistors (N, N) corresponding to a drive transistor (PD), transistors (N, N) corresponding to an access transistor (PG), and transistors (N, N) corresponding to an access transistor (PG) are formed in a lower portion of a cell. Transistors (P, P) corresponding to load transistors (PU, PU), respectively, are formed in an upper portion of the cell. Further, the transistors (P, P) overlap the transistors (N, N) in plan view.