The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Sep. 27, 2022
Applicant:
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Inventor:
Atsumi Niwa, Kanagawa, JP;
Assignee:
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 25/75 (2023.01); H01L 27/146 (2006.01); H04N 25/47 (2023.01); H04N 25/63 (2023.01); H04N 25/709 (2023.01); H04N 25/77 (2023.01); H04N 25/79 (2023.01);
U.S. Cl.
CPC ...
H04N 25/75 (2023.01); H01L 27/14634 (2013.01); H04N 25/47 (2023.01); H04N 25/63 (2023.01); H04N 25/709 (2023.01); H04N 25/77 (2023.01); H04N 25/79 (2023.01); H01L 27/14643 (2013.01);
Abstract
There is provided a solid-state image pickup element including: a photodiode configured to convert incident light into a photocurrent; an amplification transistor configured to amplify a voltage between a gate having a potential depending on the photocurrent and a source having a predetermined reference potential and output the amplified voltage from a drain; and a potential supply section configured to supply an anode of the photodiode and a back-gate of the amplification transistor with a predetermined potential lower than the reference potential.