The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Dec. 10, 2021
Macom Technology Solutions Holdings, Inc., Lowell, MA (US);
Jeremy Fisher, Raleigh, NC (US);
MACOM Technology Solutions Holdings, Inc., Lowell, MA (US);
Abstract
An RF transistor amplifier circuit comprises a Group III nitride based RF transistor amplifier having a gate terminal, a Group III nitride based self-bias circuit that includes a first Group III nitride based depletion mode high electron mobility transistor, the Group III nitride based self-bias circuit configured to generate a bias voltage, and a Group III nitride based depletion mode differential amplifier that is configured to generate an inverted bias voltage from the bias voltage and to apply the inverted bias voltage to the gate terminal of the Group III nitride based RF transistor amplifier. The Group III nitride based RF transistor amplifier, the Group III nitride based self-bias circuit and the Group III nitride based depletion mode differential amplifier are all implemented in a single die.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile