The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Jun. 30, 2021
Applicant:
Qorvo Us, Inc., Greensboro, NC (US);
Inventors:
Marcus Granger-Jones, Scotts Valley, CA (US);
Nadim Khlat, Cugnaux, FR;
Assignee:
Qorvo US, Inc., Greensboro, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/45 (2006.01); H03F 1/02 (2006.01); H03F 3/24 (2006.01); H04B 1/40 (2015.01);
U.S. Cl.
CPC ...
H03F 1/0233 (2013.01); H03F 3/245 (2013.01); H03F 2200/105 (2013.01); H03F 2200/451 (2013.01); H04B 1/40 (2013.01);
Abstract
A complementary envelope detector contemplates using two pair of mirrored transistors to provide a differential output envelope signal to an associated envelope tracking integrated circuit (ETIC) that supplies control voltages to an array of power amplifiers. While bipolar junction transistors (BJTs) may be used, other exemplary aspects use field effect transistors (FETs). In an exemplary aspect, a first pair are negative channel FETs (nFETs) and a second pair are positive channel FETs (pFETs).