The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Jan. 18, 2024
Applicant:

Skyworks Solutions, Inc., Irvine, CA (US);

Inventor:

Philip John Lehtola, Cedar Rapids, IA (US);

Assignee:

Skyworks Solutions, Inc., Irvine, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/02 (2006.01); H03F 3/19 (2006.01); H03F 3/24 (2006.01); H04B 1/04 (2006.01); H04B 1/16 (2006.01);
U.S. Cl.
CPC ...
H03F 1/0216 (2013.01); H03F 1/0288 (2013.01); H03F 3/245 (2013.01); H03F 3/19 (2013.01); H03F 2200/171 (2013.01); H03F 2200/451 (2013.01); H04B 1/04 (2013.01); H04B 2001/0408 (2013.01); H04B 1/16 (2013.01);
Abstract

Apparatus and methods for saturation detection of power amplifiers are provided. In certain embodiments, a power amplifier system includes a carrier amplifier including a first capacitor and a first gain bipolar transistor having a base configured to receive a radio frequency signal through the first capacitor. The power amplifier system further includes a saturation detector including a resistor and a detection bipolar transistor that is located within 20 μm of the first gain bipolar transistor. The detection bipolar transistor has a base connected to the base of the first gain bipolar transistor through the resistor and a collector that generates a saturation detection current indicating a saturation of the first gain bipolar transistor.


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