The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Sep. 12, 2019
Applicant:

Omron Corporation, Kyoto, JP;

Inventor:

Satoshi Iwai, Kyoto, JP;

Assignee:

OMRON CORPORATION, Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 7/12 (2006.01); H02M 1/08 (2006.01); H02M 3/155 (2006.01); H02M 7/5387 (2007.01); H03K 17/081 (2006.01);
U.S. Cl.
CPC ...
H02H 7/12 (2013.01); H02M 1/08 (2013.01); H02M 7/5387 (2013.01); H03K 17/08104 (2013.01); H02M 3/155 (2013.01);
Abstract

An overcurrent protection circuit is provided for protecting an overcurrent flowing through a switching element that is controlled to be turned on and off based on a drive signal. The overcurrent protection circuit includes: a first transistor that is an N-channel field effect transistor (FET) having a drain connected to a control terminal of the switching element and a grounded source; a second transistor that is a PNP bipolar transistor having an emitter connected to the control terminal of the switching element, a collector connected to a gate of the first transistor and grounded via a first capacitor, and a base pulled up to a predetermined pull-up voltage; and a ground circuit connected in parallel with the first capacitor.


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