The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Apr. 12, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Philip Hsin-hua Li, San Jose, CA (US);

Seshadri Ramaswami, Saratoga, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0392 (2006.01); H01L 31/0749 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03928 (2013.01); H01L 31/0749 (2013.01); H01L 31/18 (2013.01);
Abstract

A method includes forming, on a substrate by performing physical vapor deposition in vacuum, an absorber layer including copper (Cu), indium (In), gallium (Ga) and selenium (Se), forming a stack including the substrate and an oxygen-annealed absorber layer by performing in-situ oxygen annealing of the absorber layer to improve quantum efficiency of the image sensor by passivating selenium vacancies due to dangling bonds, and forming a cap layer over the oxygen-annealed absorber layer by performing physical vapor deposition in vacuum. The cap layer includes at least one of: GaO·Sn, ZnS, CdS, CdSe, ZnO, ZnSe, ZnInSe, CuGaS, InS, MgO, or ZnMgO.


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