The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Jan. 20, 2022
Applicant:

Nuvolta Technologies (Hefei) Co., Ltd., Hefei, CN;

Inventors:

John Lin, Carlsbad, CA (US);

Jinbiao Huang, Nashua, NH (US);

Xintao Wang, Pleasanton, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 23/528 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 29/402 (2013.01); H01L 23/528 (2013.01); H01L 29/401 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01); H01L 23/5226 (2013.01); H01L 29/41725 (2013.01);
Abstract

An apparatus includes a substrate of a first conductivity, an extended drain region of a second conductivity formed over the substrate, a body region of the first conductivity formed in the extended drain region, a source region of the second conductivity formed in the body region, a drain region of the second conductivity formed in the extended drain region, a first dielectric layer formed over the body region and the extended drain region, a second dielectric layer formed over the extended drain region, and between the first dielectric layer and the drain region, a first gate formed over the first dielectric layer, and a second gate formed over the second dielectric layer, wherein the second gate is electrically connected to the source region.


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