The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Nov. 08, 2021
Applicant:
Denso Corporation, Kariya, JP;
Inventors:
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 21/04 (2006.01); H01L 21/76 (2006.01); H01L 21/761 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1095 (2013.01); H01L 21/046 (2013.01); H01L 21/7602 (2013.01); H01L 21/761 (2013.01); H01L 29/0623 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01);
Abstract
In a semiconductor device, a source region is made of an epitaxial layer so as to reduce variation in thickness of a base region and variation in a threshold value. Outside of a cell part, a side surface of a gate trench is inclined relative to a normal direction to a main surface of a substrate, as compared with a side surface of a gate trench in the cell part that is provided by the epitaxial layer of the source region being in contact with the base region.