The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Dec. 10, 2020
Applicant:

Infovision Optoelectronics (Kunshan) Co., Ltd., Suzhou, CN;

Inventors:

Te-Chen Chung, Suzhou, CN;

Chih-Cheng Tsai, Suzhou, CN;

Huilong Zheng, Suzhou, CN;

Xingang Wang, Suzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); G02F 1/1343 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); G02F 1/134309 (2013.01); G02F 1/13439 (2013.01); G02F 1/136227 (2013.01); G02F 1/1368 (2013.01); H01L 27/127 (2013.01); G02F 2202/103 (2013.01);
Abstract

An array substrate includes a substrate; a gate disposed on the substrate; a first insulating layer covering the gate; a first semiconductor layer and a second semiconductor layer that are provided on the first insulating layer, a channel corresponding to the gate being provided in the first semiconductor layer and second semiconductor layer, the second semiconductor layer including a first metal oxide semiconductor layer and a second metal oxide semiconductor layer which are stacked, both the first metal oxide semiconductor layer and the second metal oxide semiconductor layer being disconnected at the channel, and the oxygen vacancy concentration of the second metal oxide semiconductor layer being less than the oxygen vacancy concentration of the first metal oxide semiconductor layer; and a source and a drain that are provided on the second semiconductor layer, both the source and the drain being in electrically conductive contact with the second semiconductor layer.


Find Patent Forward Citations

Loading…