The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Oct. 29, 2021
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Rakesh Dimri, Bengaluru, IN;

Badarish Mohan Subbannavar, Bengaluru, IN;

Somasekar J, Bengaluru, IN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/118 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11807 (2013.01); H01L 2027/11824 (2013.01); H01L 2027/11881 (2013.01);
Abstract

An IC includes first-third power rails over a semiconductor substrate. The first rail has a first polarity different from the second and third rails. The IC includes multiple first cells on the semiconductor substrate in first and second rows. The first row is separated from the second row by the first power rail. Each first cell includes a first height and a first structure having at least one transistor. For each first cell in the first row, the first structure is entirely between the first and second rails. Further, for each first cell in the second row, the first structure is between the first and third rails. The IC includes an extension cell arranged on the semiconductor substrate in the first row. The extension cell includes a second structure having at least one transistor. A portion of the second structure extends into the second row.


Find Patent Forward Citations

Loading…