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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12211828 B1

PDFFull Text
Date of Patent:
Jan. 28, 2025

Filed:

Oct. 09, 2023

Light emitting diode device containing a positive photoresist insulating spacer and a conductive sidewall contact and method of making the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Willibrordus Gerardus Maria Van Den Hoek, Saratoga, CA (US);

Tsun Yin Lau, Sunnyvale, CA (US);

Cameron Danesh, Los Altos Hills, CA (US);

Fariba Danesh, Los Altos Hills, CA (US);

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Mark W Tornow

Int. Cl.
CPC ...
H01L 25/16 (2023.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/08 (2010.01); H01L 33/12 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01); H01L 33/56 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 25/167 (2013.01); H01L 33/0025 (2013.01); H01L 33/06 (2013.01); H01L 33/08 (2013.01); H01L 33/12 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/405 (2013.01); H01L 33/56 (2013.01); H01L 33/62 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A light emitting device includes a backplane, an array of light emitting diodes attached to a frontside of the backplane, a positive tone, imageable dielectric material layer, such as a positive photoresist layer, located on the frontside of the backplane and laterally surrounding the array of light emitting diodes, such that sidewalls of the light emitting diodes contacting the positive tone, imageable dielectric material layer have a respective reentrant vertical cross-sectional profile, and at least one common conductive layer located over the positive tone, imageable dielectric material layer and contacting the light emitting diodes.

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