The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Feb. 21, 2023
Infineon Technologies Austria Ag, Villach, AT;
Lars Mueller-Meskamp, Dresden, DE;
Berthold Astegher, Villach, AT;
Hermann Gruber, Wörth an der Donau, DE;
Thomas Christian Neidhart, Klagenfurt, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A multi-voltage domain device includes a semiconductor layer including a first main surface, a second main surface arranged opposite to the first main surface, a first region including first circuitry that operates in a first voltage domain, a second region including second circuitry that operates in a second voltage domain different than the first voltage domain, and an isolation region that electrically isolates the first region from the second region in a lateral direction that extends parallel to the first and the second main surfaces. The isolation region includes at least one deep trench isolation barrier, each of which extends vertically from the first main surface to the second main surface. The multi-voltage domain device further includes at least one first capacitor configured to generate an electric field laterally across the isolation region between the first region and the second region.